AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current. improving the subthreshold slope and adjusting the threshold voltage. At a certain back gate voltage. https://chefesquipmenters.shop/product-category/spindle-mixer-parts-and-accessories/